NTE129
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Краткое описание:
Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
Дополнительная информация
Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 0.26inch |
| Diameter | 9.39mm |
| Polarity | PNP |
| Package/Case | TO-39 |
| Max Frequency | 400MHz |
| RoHS Compliant | Yes |
| Power Dissipation | 1.25W |
| Transition Frequency | 50MHz |
| Max Collector Current | 50nA |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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