OP535B
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Краткое описание:
NPN Phototransistor T-1 Package, 15V 32mA 100mW Through Hole
Дополнительная информация
The OP535B is a phototransistor with a collector-emitter breakdown voltage of 15V and saturation voltage of 1.1V. It has a maximum collector current of 32mA and a maximum power dissipation of 100mW. The device is packaged in a T-1 package and is mounted through a hole. It operates over a temperature range of -40°C to 100°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | T |
| Output Voltage | 15V |
| RoHS Compliant | Yes |
| Package Quantity | 100 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 32mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 1.1V |
