OP805SL
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Краткое описание:
NPN Phototransistor, 30V VCEO, 890nm IR, TO-18, Through Hole
Дополнительная информация
Silicon NPN phototransistor with a 3-pin TO-18 package for through-hole mounting. Features a 30V collector-emitter breakdown voltage, 50mA maximum collector current, and 250mW power dissipation. Operates across a -65°C to 125°C temperature range with a 7000ns fall time. Emits infrared light at 890nm with a 25° viewing angle. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 6.86mm |
| Polarity | NPN |
| Fall Time | 7000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 890nm |
| Lead Length | 12.7mm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 25° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Power Consumption | 250mW |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Max Collector Current | 50mA |
| Max Power Dissipation | 250mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
