PD55008-E
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Краткое описание:
RF MOSFET N-CH 40V 4A 1GHz 8W SOIC
Дополнительная информация
RF MOSFET N-CHANNEL transistor, 40V drain-source breakdown voltage, 4A continuous drain current, and 8W maximum output power. Features 17dB power gain at 500MHz, with a maximum operating frequency of 1GHz. Housed in a 3-pin PowerSO-10RF (formed lead) surface mount package with dimensions of 7.5mm length, 9.4mm width, and 3.5mm height. Operates across a temperature range of -65°C to 165°C, with 52.8W maximum power dissipation.
| Gain | 17dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.4mm |
| Height | 3.5mm |
| Length | 7.5mm |
| Polarity | N-CHANNEL |
| Frequency | 500MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Gain | 17dB |
| Output Power | 8W |
| Package/Case | SOIC |
| Test Voltage | 12.5V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 40V |
| DC Rated Voltage | 40V |
| Max Output Power | 8W |
| Package Quantity | 400 |
| Input Capacitance | 58pF |
| Power Dissipation | 52.8W |
| Number of Elements | 1 |
| Operating Frequency | 1 GHz |
| Radiation Hardening | No |
| Max Power Dissipation | 52.8W |
| DS Breakdown Voltage-Min | 40V |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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