PS3G01X
Снят с производства
Краткое описание:
NPN Phototransistor, 880nm, 2-Pin, T-1, Through Hole
Дополнительная информация
Silicon NPN phototransistor chip, 880nm peak wavelength, featuring a 2-pin T-1 package with a 3 mm diameter and 3.8 mm diameter. This through-hole mounted component offers a 120° half-intensity angle and a top-viewing orientation. Key electrical specifications include a maximum collector current of 30 mA, maximum emitter-collector voltage of 5 V, and maximum collector-emitter voltage of 30 V. Operating temperature range is -30°C to 85°C, with a maximum power dissipation of 75 mW.
| PCB | 2 |
| ECCN | EAR99 |
| PPAP | No |
| Type | Chip |
| EU RoHS | Yes |
| HTS Code | 8541407080 |
| Mounting | Through Hole |
| Polarity | NPN |
| Cage Code | S4238 |
| Pin Count | 2 |
| Automotive | No |
| Lead Shape | Through Hole |
| Lens Color | Water Clear |
| Schedule B | 8541407080 |
| Package/Case | T-1 |
| AEC Qualified | No |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.5 |
| Lens Shape Type | Domed |
| Peak Wavelength | 880nm |
| Maximum Fall Time | 5000ns |
| Maximum Rise Time | 5000ns |
| Basic Package Type | Through Hole |
| Package Description | 3 mm Package |
| Package Family Name | T-1 |
| Package Height (mm) | 4.5 |
| Radiation Hardening | No |
| Viewing Orientation | Top View |
| Maximum Dark Current | 200nA |
| Phototransistor Type | Phototransistor |
| Maximum Light Current | 3600uA |
| Package Diameter (mm) | 3.8 |
| Fabrication Technology | NPN Transistor |
| Max Operating Temperature | 85°C |
| Maximum Collector Current | 30mA |
| Maximum Power Dissipation | 75mW |
| Min Operating Temperature | -30°C |
| Number of Channels per Chip | 1 |
| Half Intensity Angle Degrees | 120° |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Emitter-Collector Voltage | 5V |
| Maximum Collector-Emitter Saturation Voltage | 0.1V |
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