PSMN012-80PS
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Краткое описание:
80V 74A N-CH Power MOSFET TO-220AB Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 80V drain-source voltage and 74A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low drain-source on-resistance of 11mΩ at 10V. Key electrical characteristics include a maximum gate-source voltage of 20V and typical gate charge values of 36nC or 43nC at 10V. With a maximum power dissipation of 148W and an operating temperature range of -55°C to 175°C, this component is designed for demanding applications.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Package Length (mm) | 10.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 148000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 43nC |
| Typical Gate Charge @ Vgs | 36@10V|43@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 80V |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Input Capacitance @ Vds | 2782@12VpF |
| Maximum Continuous Drain Current | 74A |
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