PT100MF0MP1
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Краткое описание:
NPN Phototransistor, 910nm, 35V, 20mA, SMD
Дополнительная информация
NPN phototransistor for surface mount applications, featuring a 910nm wavelength and a 30° viewing angle. This component offers a collector-emitter breakdown voltage of 35V and a maximum collector current of 20mA. Encased in an SMD/SMT package with a black, domed lens, it operates within a temperature range of -30°C to 85°C and has a power dissipation of 75mW. The device exhibits a fall time of 6µs and is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.5mm |
| Height | 2.2mm |
| Length | 3mm |
| Polarity | NPN |
| Fall Time | 6us |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Lens Color | Black |
| Lens Style | Domed |
| Wavelength | 910nm |
| Package/Case | SMD/SMT |
| Viewing Angle | 30° |
| Output Current | 20mA |
| RoHS Compliant | Yes |
| Package Quantity | 1500 |
| Power Consumption | 75mW |
| Power Dissipation | 75mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -30°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
