QSC112CC6R0
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Краткое описание:
NPN Phototransistor, 30V, 100°C, Through Hole
Дополнительная информация
The QSC112CC6R0 is a phototransistor from Onsemi with a collector-emitter breakdown voltage of 30V. It operates within a temperature range of -40°C to 100°C and has a maximum power dissipation of 100mW. The device is packaged in a bulk package and is available in quantities of 250. It is a lead-free component with a domed lens style and a viewing angle of 8°.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Fall Time | 5us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 8° |
| Package Quantity | 250 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
