QSD124
Производится
Увеличить
Краткое описание:
NPN Phototransistor, 880nm IR, 30V VCEO, Through Hole
Дополнительная информация
NPN silicon phototransistor with 880nm peak sensitivity, housed in a T-1 3/4 package with a domed, transparent lens. Features a 30V collector-emitter breakdown voltage, 100mW maximum power dissipation, and a 24° viewing angle. Operates across a -40°C to 100°C temperature range with a 5V operating supply voltage. This through-hole component offers a 7000ns fall time and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.284g |
| Polarity | NPN |
| Fall Time | 7000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Black, Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 24° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| Max Input Current | 100uA |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
