RFM04U6P

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RFM04U6P - Toshiba
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Краткое описание: RF MOSFET N-CH 16V 2A SOT PW-Mini SMT
Производитель Toshiba
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel RF MOSFET transistor, single depletion mode configuration, designed for surface mounting. Features a 16V maximum drain-source voltage and 2A maximum continuous drain current. Packaged in a 4-pin PW-Mini SOT lead-frame SMT with a 1.5mm pin pitch, offering 7000mW maximum power dissipation. Operates across a temperature range of -45°C to 150°C, delivering typical power gain of 13.3 dB and 4.3W typical output power.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
EU RoHS Yes
HTS Code 8541290095
Mounting Surface Mount
Cage Code S0562
Pin Count 4
Automotive No
Lead Shape Flat
Schedule B 8541290080
Channel Mode Depletion
Channel Type N
Output Power 4.3(Typ)W
Package/Case PW-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2.5
Typical Power Gain 13.3dB
Package Family Name SOT
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Radiation Hardening No
Seated Plane Height (mm) 1.6(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 7000mW
Min Operating Temperature -45°C
Number of Elements per Chip 1
Maximum Drain Source Voltage 16V
Maximum Continuous Drain Current 2A

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