RMJ700N04TL
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Краткое описание:
40V 70A N-CH Power MOSFET, SMT, LPTS, 3-Pin
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 70A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 4mΩ at 10V Vgs. The component is housed in a 3-pin Lead-Frame SMT (LPTS) package with gull-wing leads for surface mounting, measuring 10.1mm x 9mm x 4.5mm. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | LPTS |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9 |
| Package Height (mm) | 4.5 |
| Package Length (mm) | 10.1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 50nC |
| Typical Gate Charge @ Vgs | 50@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Drain Source Resistance | 4@10VmOhm |
| Maximum Continuous Drain Current | 70A |
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