RSQ045N03TR
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Краткое описание:
N-Channel MOSFET, 30V, 4.5A, 38mR Rds(on), SOT-23-6
Дополнительная информация
N-channel MOSFET featuring 30V drain-source breakdown voltage and 4.5A continuous drain current. Offers a low 56mΩ maximum drain-source on-resistance. Designed for surface mount applications with a compact TSMT6 package. Includes fast switching characteristics with 12ns turn-on delay and 19ns fall time. Operates across a wide temperature range from -55°C to 150°C with 1.25W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount, Through Hole |
| Width | 1.8mm |
| Height | 0.95mm |
| Length | 3mm |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 38mR |
| Package/Case | SOT-23-6 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 520pF |
| Power Dissipation | 1.25W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 56MR |
| Drain to Source Breakdown Voltage | 30V |
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