S888T
Снят с производства
Увеличить
Краткое описание:
RF MOSFET N-CH 10V 0.02A SOT-143 4-Pin
Дополнительная информация
N-channel RF MOSFET, single dual gate configuration, depletion mode. Features 10V maximum drain-source voltage and 0.02A maximum continuous drain current. Surface mountable in a 4-pin SOT-143 (TO-253AA) plastic package with gull-wing leads. Offers 160mW maximum power dissipation at 78°C ambient temperature, operating from -55°C to 150°C. Typical power gain is 26dB, with typical input capacitance of 1.9pF and 1.2pF at 4V.
| PCB | 4 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-253AA |
| HTS Code | 8541210095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Channel Mode | Depletion |
| Channel Type | N |
| Package/Case | SOT-143 |
| AEC Qualified | No |
| Configuration | Single Dual Gate |
| Pin Pitch (mm) | 1.8(Max)|2(Max) |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.4(Max) |
| Typical Power Gain | 26dB |
| Package Description | Small Outline Transistor |
| Package Family Name | TO-253-AA |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 3(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 160@Ta=78CmW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 10V |
| Typical Input Capacitance @ Vds | 1.9@4V@Gate 1|1.2@4V@Gate 2pF |
| Maximum Continuous Drain Current | 0.02A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
