SCT2450KEC
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Краткое описание:
1200V 10A N-Ch SiC MOSFET TO-247 585mR Rds(on)
Дополнительная информация
N-Channel Silicon Carbide MOSFET featuring 1200V drain-source voltage and 10A continuous drain current. This power field-effect transistor offers a maximum on-resistance of 585mΩ and a typical on-resistance of 450mΩ. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 85W. Key switching characteristics include a turn-on delay of 19ns and a fall time of 34ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 20.95mm |
| Height | 5.03mm |
| Length | 15.9mm |
| Polarity | N-CHANNEL |
| Fall Time | 34ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 585mR |
| Nominal Vgs | 4V |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 360 |
| Input Capacitance | 463pF |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 585mR |
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