SD1731
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NPN RF Power Transistor, 20A, 55V, 233W, HF Band, Si, Surface Mount
Дополнительная информация
NPN RF Power Transistor designed for HF band applications. Features a 55V collector-emitter breakdown voltage and 20A continuous collector current. Offers a minimum gain of 15 and a maximum power dissipation of 233W. Packaged in a plastic M174 (FM-4) case with surface mount and screw mounting options. Operates across a wide temperature range from -65°C to 150°C, is lead-free, and RoHS compliant.
| Gain | 13dB |
| RoHS | Compliant |
| Mount | Surface Mount, Screw |
| Width | 12.83mm |
| Height | 7.11mm |
| Length | 24.89mm |
| hFE Min | 15 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tray |
| Package/Case | M |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 110V |
| Package Quantity | 50 |
| Radiation Hardening | No |
| Max Collector Current | 20A |
| Max Power Dissipation | 233W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 4V |
| Continuous Collector Current | 20A |
| Collector Base Voltage (VCBO) | 110V |
| Collector-emitter Voltage-Max | 55V |
| Collector Emitter Breakdown Voltage | 55V |
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