SD2904
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Краткое описание:
RF MOSFET 65V 30W 400MHz N-CH PLASTIC M
Дополнительная информация
N-channel RF Power MOSFET designed for UHF band applications, featuring a 65V drain-to-source breakdown voltage and a continuous drain current of 5A. This transistor operates effectively from 2MHz to 500MHz, delivering 30W of output power with a typical gain of 11.5dB at 400MHz. Housed in a 4-pin plastic M113 package with screw mounting, it offers a maximum power dissipation of 100W and operates across a wide temperature range of -65°C to 200°C. This lead-free and RoHS compliant component is supplied in bulk packaging.
| Gain | 11.5dB |
| RoHS | Compliant |
| Mount | Screw |
| Polarity | N-CHANNEL |
| Frequency | 400MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Output Power | 30W |
| Package/Case | M |
| Test Voltage | 28V |
| Max Frequency | 500MHz |
| Min Frequency | 2MHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 30W |
| Package Quantity | 25 |
| Input Capacitance | 47pF |
| Power Dissipation | 100W |
| Number of Elements | 1 |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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