SD2918
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30W RF DMOS Transistor, 125V, 30MHz, N-CH
Дополнительная информация
N-channel RF transistor delivering 30W output power at 30MHz, featuring a 125V drain-to-source breakdown voltage and 50V test voltage. Operates with a continuous drain current of 6A and a gate-to-source voltage of 20V, offering 22dB gain. Housed in an M package for screw mounting, this component supports a maximum operating frequency of 200MHz and a maximum power dissipation of 175W. It is lead-free, RoHS compliant, and operates across a temperature range of -65°C to 200°C.
| Gain | 22dB |
| RoHS | Compliant |
| Mount | Screw |
| Width | 6.48mm |
| Height | 7.11mm |
| Length | 24.89mm |
| Polarity | N-CHANNEL |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Tray |
| Output Power | 30W |
| Package/Case | M |
| Test Voltage | 50V |
| Max Frequency | 200MHz |
| RoHS Compliant | Yes |
| Voltage Rating | 125V |
| DC Rated Voltage | 125V |
| Max Output Power | 30W |
| Package Quantity | 25 |
| Input Capacitance | 58pF |
| Power Dissipation | 175W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 175W |
| DS Breakdown Voltage-Min | 125V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 5V |
| Drain to Source Breakdown Voltage | 125V |
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