SD2933
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300W RF DMOS Transistor, 150MHz, 125V, N-CH
Дополнительная информация
N-Channel RF Transistor, 300W output power at 150 MHz, featuring 125V Drain to Source Breakdown Voltage and 40A Continuous Drain Current. This DMOS transistor offers a maximum power dissipation of 648W and a power gain of 23.5dB. Designed for HF/VHF applications, it operates within a temperature range of -65°C to 200°C and is housed in an M package for screw mounting. RoHS compliant and lead-free.
| Gain | 23.5dB |
| RoHS | Compliant |
| Mount | Screw |
| Width | 16.13mm |
| Height | 7.11mm |
| Length | 28.96mm |
| Polarity | N-CHANNEL |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Tray |
| Power Gain | 23.5dB |
| Output Power | 300W |
| Package/Case | M |
| Test Voltage | 50V |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Voltage Rating | 125V |
| DC Rated Voltage | 125V |
| Max Output Power | 400W |
| Package Quantity | 25 |
| Input Capacitance | 1nF |
| Power Dissipation | 648W |
| Number of Elements | 1 |
| Operating Frequency | 150 MHz |
| Radiation Hardening | No |
| Max Power Dissipation | 648W |
| DS Breakdown Voltage-Min | 125V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 125V |
| Drain to Source Breakdown Voltage | 125V |
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