SD2942
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Краткое описание:
350W 130V 175MHz N-CH RF DMOS Push-Pull Transistor
Дополнительная информация
High-power RF transistor delivering 350W output power at 175MHz, featuring a 130V drain-to-source breakdown voltage and 40A continuous drain current. This N-channel DMOS device offers 17dB power gain and operates across a wide temperature range from -65°C to 200°C. Designed for HF/VHF applications, it supports screw and surface mounting with a 50V test voltage and 250MHz maximum frequency. The component is RoHS compliant and lead-free, packaged for rail/tube distribution.
| Gain | 17dB |
| RoHS | Compliant |
| Mount | Screw, Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 175MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Gain | 17dB |
| Output Power | 350W |
| Package/Case | M |
| Test Voltage | 50V |
| Max Frequency | 250MHz |
| RoHS Compliant | Yes |
| Voltage Rating | 130V |
| DC Rated Voltage | 130V |
| Max Output Power | 350W |
| Package Quantity | 15 |
| Input Capacitance | 415pF |
| Power Dissipation | 500W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 500W |
| DS Breakdown Voltage-Min | 130V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 130V |
| Drain to Source Breakdown Voltage | 130V |
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