SD56120M
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Краткое описание:
120W RF LDMOS Transistor, 65V, 860MHz, N-CH
Дополнительная информация
120W LDMOS RF transistor featuring N-CHANNEL polarity and a push-pull package. Operates across a frequency range of 470 to 860MHz with a maximum operating frequency of 1GHz. Delivers 120W output power with a continuous drain current of 14A and a drain-to-source voltage rating of 65V. Offers a gain of 16dB and a maximum power dissipation of 236W. Designed for screw mounting and operates within a temperature range of -65°C to 200°C. RoHS compliant and lead-free.
| Gain | 16dB |
| RoHS | Compliant |
| Mount | Screw |
| Polarity | N-CHANNEL |
| Frequency | 860MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Output Power | 120W |
| Package/Case | M |
| Test Voltage | 32V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 120W |
| Package Quantity | 15 |
| Input Capacitance | 221pF |
| Power Dissipation | 236W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 236W |
| DS Breakdown Voltage-Min | 65V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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