SD57060-01
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
60W 65V 1GHz RF LDMOS Transistor, N-Channel, 7A
Дополнительная информация
60W LDMOS RF Transistor, N-CHANNEL, 65V Drain to Source Breakdown Voltage, operating up to 1GHz. Features 15dB gain, 7A continuous drain current, and 60W output power at 28V test voltage. Housed in a flangeless M package for surface mounting, this transistor offers a wide operating temperature range from -65°C to 200°C.
| Gain | 15dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Output Power | 60W |
| Package/Case | M |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 60W |
| Package Quantity | 25 |
| Input Capacitance | 88pF |
| Power Dissipation | 108W |
| Number of Elements | 1 |
| Max Power Dissipation | 108W |
| DS Breakdown Voltage-Min | 65V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
