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N-CH MOSFET, 30V, 5A, Dual Drain, 8-Pin SOP, Si
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 5A continuous drain current. This dual dual drain device is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 51 mOhm at 10V, typical gate charge of 3.9 nC at 5V, and typical input capacitance of 230 pF at 10V. The plastic package measures 5mm x 3.9mm with a 1.27mm pin pitch and a seated plane height of 1.75mm, operating across a temperature range of -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOP |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Plastic Small Outline Package |
| Package Family Name | SOP |
| Package Length (mm) | 5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 3.9@5VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 51@10VmOhm |
| Typical Input Capacitance @ Vds | 230@10VpF |
| Maximum Continuous Drain Current | 5A |
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