SH8M5
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Краткое описание:
Dual N/P-CH MOSFET 30V 6A/7A 8-Pin SOP SMT
Дополнительная информация
Dual N/P-channel enhancement mode power MOSFET in an 8-pin SOP package. Features 30V drain-source voltage, 6A continuous drain current for N-channel and 7A for P-channel. Offers low on-resistance of 30mOhm (N-channel) and 28mOhm (P-channel) at 10V Vgs. Surface-mount component with gull-wing leads, measuring 5mm x 3.9mm with a 1.27mm pin pitch. Maximum power dissipation is 2000mW, operating temperature range from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | S5518 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | SOP |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.9 |
| Package Description | Plastic Small Outline Package |
| Package Family Name | SOP |
| Package Length (mm) | 5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 7.2@5V@N Channel|25@5V@P ChannelnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 30@10V@N Channel|28@10V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 520@10V@N Channel|2600@10V@P ChannelpF |
| Maximum Continuous Drain Current | 6@N Channel|7@P ChannelA |
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