SI1016X-T1-E3
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Краткое описание:
20V N/P-CH MOSFET SOT-563 1.2R
Дополнительная информация
Dual N-channel and P-channel MOSFETs in a compact SOT-563 package. Features 20V drain-source breakdown voltage and 600mA continuous drain current. Offers low 1.2 Ohm drain-source on-resistance at a nominal Vgs of 800mV. Designed for surface mounting with a maximum power dissipation of 250mW. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Nominal Vgs | 800mV |
| Termination | SMD/SMT |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 800mV |
| Number of Channels | 2 |
| Dual Supply Voltage | 20V |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 20V |
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