SI1029X-T1-E3
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Краткое описание:
N/P-CH MOSFET 60V 190mA 4R SOT563F
Дополнительная информация
N-channel and P-channel MOSFET featuring 60V drain-source voltage and 190mA continuous drain current. Surface mountable in a compact SOT563F package, this component offers a low drain-source on-resistance of 1.4 Ohms at a nominal gate-source voltage of 2.5V. Operating across a wide temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 250mW and includes fast switching characteristics with turn-on delay of 20ns and turn-off delay of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 30pF |
| Power Dissipation | 250mW |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4R |
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