SI1034X-T1-E3
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Краткое описание:
2 N-CH MOSFET 20V 200mA 5R SOT563F
Дополнительная информация
Dual N-channel MOSFET featuring 20V drain-source breakdown voltage and 200mA continuous drain current. Surface mountable in a SOT563F package, this component offers a low 5 Ohm drain-source on-resistance. Operating across a wide temperature range of -55°C to 150°C, it boasts a 250mW power dissipation and is RoHS compliant. Ideal for applications requiring efficient switching with fast turn-on and turn-off times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Nominal Vgs | 1.2V |
| Package/Case | SC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 250mW |
| Threshold Voltage | 1.2V |
| Turn-On Delay Time | 50ns |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5R |
| Drain to Source Breakdown Voltage | 20V |
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