SI1071X-T1-E3
Снят с производства
Краткое описание:
P-CH MOSFET 30V 200mA 167mR SOT563F
Дополнительная информация
P-channel MOSFET, 30V drain-source voltage, 200mA continuous drain current, and 244mΩ on-state resistance. Features a 1.2mm width, 1.7mm length, and 0.6mm height in a SOT563F package for surface mounting. Operates across a -55°C to 150°C temperature range with a 12V gate-source voltage. Includes 13ns turn-on delay and 36ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Packaging | Tape and Reel |
| Rds On Max | 167mR |
| Nominal Vgs | -1.45V |
| Termination | SMD/SMT |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 315pF |
| Threshold Voltage | -1.45V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | -30V |
| On-State Resistance | 244mR |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 236mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 244mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 30V |
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