SI1072X-T1-E3

Снят с производства
SI1072X-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 1.3A 93mR SOT563F Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 30V drain-source voltage and 1.3A continuous drain current. Features low 93mΩ drain-source on-resistance and 280pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 236mW. This surface-mount component is housed in a compact 1.7mm x 1.2mm x 0.6mm package.
RoHS Compliant
Mount Surface Mount
Width 1.2mm
Height 0.6mm
Length 1.7mm
Series TrenchFET®
Weight 0.001129oz
Polarity N-CHANNEL
Fall Time 31ns
Packaging Tape and Reel
Rds On Max 93mR
Resistance 0.093R
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 280pF
Number of Channels 1
Turn-On Delay Time 13ns
Turn-Off Delay Time 9ns
Max Power Dissipation 236mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 93mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.3A
Drain to Source Voltage (Vdss) 30V

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