SI1330EDL-T1-GE3
Производится
Увеличить
Краткое описание:
N-CHANNEL TrenchFET MOSFET 60V 240mA SOT-323-3 Surface Mount
Дополнительная информация
The SI1330EDL-T1-GE3 is a single N-CHANNEL TrenchFET MOSFET from Vishay, packaged in a SOT-323-3 surface mount package. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 280mW. The device has a continuous drain current of 240mA and a drain to source resistance of 2.5 ohms. The MOSFET is RoHS compliant and has a gate to source voltage of 20V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.004395oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.6ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.5R |
| Package/Case | SOT-323-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 280mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 3.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12.8ns |
| Max Power Dissipation | 280mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 240mA |
| Drain to Source Voltage (Vdss) | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
