SI1413EDH-T1-E3
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P-CH MOSFET, 20V, 2.3A, 115mR Rds On, SC-70
Дополнительная информация
P-channel MOSFET, 20V drain-source breakdown voltage, 2.3A continuous drain current. Features 115mR maximum drain-source on-resistance at a nominal gate-source voltage of -450mV. Operates within a temperature range of -55°C to 150°C with 1W maximum power dissipation. Packaged in a compact SC-70 surface-mount case, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.053inch |
| Height | 0.039inch |
| Length | 0.086inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 1600ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 115mR |
| Nominal Vgs | -450mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1W |
| Threshold Voltage | -450mV |
| Turn-On Delay Time | 750ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 3900ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 220mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 115mR |
| Drain to Source Breakdown Voltage | 20V |
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