SI1417EDH-T1-E3
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Краткое описание:
P-CH MOSFET 12V 2.7A 1W SOT-363
Дополнительная информация
P-channel MOSFET, 12V Drain-Source Breakdown Voltage, 2.7A Continuous Drain Current, and 85mΩ Max Drain-Source On Resistance at 4.5V. Features a 1W Power Dissipation and operates within a -55°C to 150°C temperature range. Surface mountable in a SOT-363 package, this RoHS compliant component offers fast switching with a 600ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 1400ns |
| Packaging | Tape and Reel |
| Rds On Max | 85mR |
| Nominal Vgs | -450mV |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1W |
| Threshold Voltage | -450mV |
| Turn-On Delay Time | 600ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4900ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 85MR |
| Drain to Source Breakdown Voltage | 12V |
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