SI1426DH-T1-E3

Снят с производства
SI1426DH-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 2.8A 75mR SOT-363
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL MOSFET, 30V Drain-Source Voltage, 2.8A Continuous Drain Current, and 75mΩ Max Drain-Source On-Resistance. This surface mount component features a SOT-363-6 package and is designed for efficient switching with a 2.5V nominal gate-source voltage. It offers fast switching speeds with turn-on delay times of 10ns and fall times of 12ns. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant device has a maximum power dissipation of 1W.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 75mR
Nominal Vgs 2.5V
Package/Case SOT-363-6
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage 2.5V
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 75mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.8A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 75MR

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