SI1450DH-T1-E3

Снят с производства
SI1450DH-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 8V 4.53A 47mR SOT-363-6
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET, 8V Vdss, 4.53A continuous drain current, and 47mR Rds On. Features include 8V dual supply voltage, 5V gate-source voltage, and 1V threshold voltage. This surface mount component, housed in a SOT-363-6 (SC70-6) package, offers fast switching with 8ns turn-on and 18ns turn-off delay times. It operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 2.78W.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.000265oz
Polarity N-CHANNEL
Fall Time 73ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 47mR
Nominal Vgs 1V
Termination SMD/SMT
Package/Case SOT-363-6
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 535pF
Threshold Voltage 1V
Number of Channels 1
Turn-On Delay Time 8ns
Dual Supply Voltage 8V
On-State Resistance 58mR
Radiation Hardening No
Turn-Off Delay Time 18ns
Reach SVHC Compliant No
Max Power Dissipation 2.78W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 47mR
Gate to Source Voltage (Vgs) 5V
Continuous Drain Current (ID) 4.53A
Drain to Source Voltage (Vdss) 8V

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