SI1470DH-T1-E3
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Краткое описание:
30V 3.8A N-CH MOSFET, 66mR Rds On, SC-70
Дополнительная информация
N-channel MOSFET, 30V Vds, 3.8A continuous drain current, and 66mΩ maximum drain-source on-resistance. Features a 1.6V threshold voltage and 12V gate-source voltage rating. Surface mountable in a compact 6-pin SC-70 package, offering 2.8W maximum power dissipation. RoHS compliant with fast switching times including 9ns turn-on and 18ns turn-off delays.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 51ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 66mR |
| Nominal Vgs | 1.6V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 510pF |
| Power Dissipation | 1.5W |
| Threshold Voltage | 1.6V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 66mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 66mR |
| Drain to Source Breakdown Voltage | 30V |
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