SI1470DH-T1-GE3
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Краткое описание:
N-CH MOSFET 30V 3.8A 66mR SOT-363-6
Дополнительная информация
N-channel MOSFET, 30V drain-source breakdown voltage, 3.8A continuous drain current, and 66mΩ maximum drain-source on-resistance. Features a 600mV nominal gate-source voltage, 510pF input capacitance, 7.1ns fall time, 9ns turn-on delay, and 18ns turn-off delay. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.8W. Packaged in a SOT-363-6 (SC-70-6) surface-mount case, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 7.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 66mR |
| Nominal Vgs | 600mV |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 510pF |
| Power Dissipation | 1.5W |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 66mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 66MR |
| Drain to Source Breakdown Voltage | 30V |
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