SI1473DH-T1-E3
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Краткое описание:
P-CH MOSFET 30V 2.8A 100mR SOT-363-6
Дополнительная информация
P-channel MOSFET, 30V drain-source voltage, 2.8A continuous drain current, and 100mΩ maximum drain-source resistance. Features a compact SOT-363-6 (SC70-6) surface mount package with dimensions of 2mm length, 1.25mm width, and 1mm height. Operates with a nominal gate-source voltage of -3V and a maximum gate-source voltage of 20V. Offers fast switching speeds with turn-on delay time of 4ns and fall time of 6ns. Rated for a maximum power dissipation of 1.5W and a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Fall Time | 6ns |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | -3V |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 365pF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 30V |
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