SI1488DH-T1-E3
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Краткое описание:
20V 4.6A N-CH MOSFET SC-70 49mR
Дополнительная информация
N-channel MOSFET, 20V drain-source breakdown voltage, 4.6A continuous drain current, and 49mΩ maximum drain-source on-resistance. Features include 8.5ns turn-on delay, 35ns turn-off delay, and 45ns fall time. This surface-mount component operates within a -55°C to 150°C temperature range and offers 1.5W maximum power dissipation. Packaged in a 6-pin SC-70 tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 49mR |
| Nominal Vgs | 950mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 530pF |
| Power Dissipation | 1.5W |
| Threshold Voltage | 950mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 49mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 49mR |
| Drain to Source Breakdown Voltage | 20V |
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