SI1499DH-T1-E3
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Краткое описание:
P-CH MOSFET, -8V, 1.6A, 78mR Rds On, SC-82
Дополнительная информация
P-channel MOSFET, surface mount, SC-70 package. Features -8V drain-source voltage (Vdss) and 1.6A continuous drain current (ID). Offers low 78mΩ drain-source on-resistance (Rds On Max) at a nominal Vgs of -800mV. Operates across a wide temperature range from -55°C to 150°C with 2.5W maximum power dissipation. Includes fast switching times with turn-on delay of 8ns and fall time of 60ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 78mR |
| Nominal Vgs | -800mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 650pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -800mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 78mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 78mR |
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