SI1553DL-T1
Снят с производства
Увеличить
Краткое описание:
N/P-CH MOSFET 20V, 410mA, 385mR, SC70-6, SMT
Дополнительная информация
Dual N-Channel and P-Channel MOSFET, 20V Vds, 410mA continuous drain current. Features low Rds(on) of 385mR, 7.5ns turn-on delay, and 8.5ns turn-off delay. Packaged in a compact SOT-363-6 (SC70-6) surface-mount case, ideal for space-constrained applications. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 270mW.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 385mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | No |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 7.5ns |
| Turn-Off Delay Time | 8.5ns |
| Max Power Dissipation | 270mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 995mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 410mA |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
