SI1553DL-T1-E3
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Краткое описание:
N/P-CH MOSFET 20V 410mA SOT-363-6
Дополнительная информация
Dual N-channel and P-channel MOSFET, surface mountable in a SOT-363-6 package. Features a 20V drain-source voltage (Vdss) and a continuous drain current of 410mA. Offers a maximum drain-source on-resistance (Rds On) of 385mR at a nominal Vgs of 600mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 270mW. Includes a fall time of 20ns and a turn-off delay time of 8.5ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 385mR |
| Nominal Vgs | 600mV |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.5ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 270mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 410mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 995MR |
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