SI1563EDH-T1-E3
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Краткое описание:
N/P-Channel MOSFET 20V 1.13A SOT-363-6 490mR
Дополнительная информация
N and P-Channel MOSFET featuring 20V drain-source breakdown voltage and 490mΩ drain-source on-resistance. Surface mountable in a SOT-363-6 package, this component offers a continuous drain current of 1.13A and a maximum power dissipation of 570mW. Operating across a temperature range of -55°C to 150°C, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Current | 1A |
| Voltage | 20V |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 850ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Nominal Vgs | 450mV |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 570mW |
| Threshold Voltage | 1V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 840ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 570mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 490mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.13A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 490mR |
| Drain to Source Breakdown Voltage | 20V |
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