SI1903DL-T1-E3
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Краткое описание:
P-CH MOSFET 20V 410mA 995mR SC
Дополнительная информация
P-channel MOSFET with 20V drain-source breakdown voltage and 410mA continuous drain current. Features a low 995mΩ drain-source on-resistance and operates with a 12V gate-source voltage. Surface mountable in SC package, this component offers fast switching with turn-on delay of 7.5ns and fall time of 20ns. Rated for a maximum power dissipation of 270mW, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 995mR |
| Nominal Vgs | -1.5V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 270mW |
| Threshold Voltage | -1.5V |
| Number of Elements | 2 |
| Turn-On Delay Time | 7.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 270mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 995mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 410mA |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 995mR |
| Drain to Source Breakdown Voltage | 20V |
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