SI1905BDH-T1-E3
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P-CH MOSFET, 8V, 0.63A, 542mR, SC-89
Дополнительная информация
P-channel MOSFET, 8V Gate-Source Voltage, 580mA Continuous Drain Current. Features 542mR Drain-Source On Resistance, 62pF Input Capacitance, and 357mW Max Power Dissipation. Operates from -55°C to 150°C, with 9ns Turn-On Delay and 50ns Turn-Off Delay. Surface mountable in an SC package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 542mR |
| Nominal Vgs | -1V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 62pF |
| Threshold Voltage | -1V |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 357mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 542mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 580mA |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 542MR |
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