SI1912EDH-T1-E3
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Краткое описание:
20V 1.13A N-CH MOSFET, 280mR RdsOn, SOT-363
Дополнительная информация
N-channel MOSFET transistor, 20V drain-source voltage, 1.13A continuous drain current. Features 280mΩ maximum drain-source on-resistance and 450mV threshold voltage. Operates with a 12V gate-source voltage, offering 45ns turn-on delay and 85ns fall time. Packaged in a 6-pin SOT-363 surface-mount case, this RoHS compliant component has a maximum power dissipation of 570mW and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 85ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Nominal Vgs | 450mV |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 570mW |
| Threshold Voltage | 450mV |
| Number of Elements | 2 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 350ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 570mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.13A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 280mR |
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