SI1913DH-T1-E3
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Краткое описание:
P-CH MOSFET 20V 880mA SOT-363-6 490mR
Дополнительная информация
P-channel MOSFET, 20V drain-source breakdown voltage, 880mA continuous drain current, and 490mΩ maximum drain-source on-resistance. Features a 20V Vdss rating and 8V gate-source voltage. Surface mountable in a SOT-363-6 package, operating from -55°C to 150°C with 570mW power dissipation. RoHS compliant with fast switching times including 15ns turn-on and 18ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SI19xxDx |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 490mR |
| Nominal Vgs | -450mV |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 570mW |
| Threshold Voltage | -450mV |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 570mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 490mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 880mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 490mR |
| Drain to Source Breakdown Voltage | 20V |
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