SI1922EDH-T1-GE3
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Краткое описание:
2 N-Ch MOSFET, 20V, 1.3A, 198mR, SOT-363
Дополнительная информация
Dual N-channel MOSFET, 20V Vds, 1.3A continuous drain current, and 198mΩ Rds(on). Features a 400mV threshold voltage, 43ns turn-on delay, and 220ns fall time. Packaged in a SOT-363-6 surface-mount case, this component offers a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 220ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 198mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 400mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 43ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 480ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 198mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 20V |
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