SI1926DL-T1-E3

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SI1926DL-T1-E3 - Vishay(Siliconix)
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Краткое описание: 2 N-Ch MOSFET 60V 370mA 1.4R SOT-363
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Dual N-channel MOSFET featuring 60V drain-source voltage and 370mA continuous drain current. Surface mountable in a SOT-363 package, this component offers a maximum on-resistance of 1.4 Ohms. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 510mW. Key switching characteristics include a 6.5ns turn-on delay and 12ns fall time.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.000988oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.4R
Package/Case SOT-363
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 18.5pF
Threshold Voltage 2.5V
Number of Channels 2
Turn-On Delay Time 6.5ns
Turn-Off Delay Time 13ns
Reach SVHC Compliant No
Max Power Dissipation 510mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.4R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 370mA
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 1.4R

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