SI1958DH-T1-E3
Снят с производства
Увеличить
Краткое описание:
20V 1.3A Dual N-CH MOSFET SOT-363
Дополнительная информация
Dual N-channel MOSFET featuring 20V drain-source breakdown voltage and 1.3A continuous drain current. Surface mountable in a SOT-363 package, this component offers a maximum on-state resistance of 205mR at a nominal Vgs of 1.6V. With a power dissipation of 740mW and operating temperatures from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 8ns and fall time of 25ns. This RoHS compliant device is designed for efficient power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 205mR |
| Nominal Vgs | 1.6V |
| Termination | SMD/SMT |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 105pF |
| Power Dissipation | 740mW |
| Threshold Voltage | 1.6V |
| Turn-On Delay Time | 8ns |
| Dual Supply Voltage | 20V |
| On-State Resistance | 340mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 740mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 205mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 205MR |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
