SI1970DH-T1-E3
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Dual N-Ch MOSFET, 30V, 1.3A, 225mR, SOT-363
Дополнительная информация
Dual N-Channel MOSFET, 30V Drain-Source Voltage (Vdss), 1.3A Continuous Drain Current (ID). Features 225mΩ maximum Drain-Source On Resistance (Rds On) at a nominal Gate-Source Voltage (Vgs) of 1.6V. Surface mountable in a SOT-363-6 package, this component offers a 10ns fall time and 10ns turn-off delay. Maximum power dissipation is 1.25W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 225mR |
| Nominal Vgs | 1.6V |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 95pF |
| Threshold Voltage | 1.6V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 225mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 225mR |
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