SI1972DH-T1-E3
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Краткое описание:
2 N-CH MOSFET 30V 1.3A 190mR SOT-363-6
Дополнительная информация
Dual N-channel MOSFET, 30V drain-source voltage, 1.3A continuous drain current. Features low 190mΩ drain-source on-resistance at 2.8V gate-source voltage. Surface mountable in a compact SOT-363-6 package, operating from -55°C to 150°C. Includes fast switching times with 5ns turn-on delay and 10ns fall time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 225mR |
| Nominal Vgs | 2.8V |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 75pF |
| Threshold Voltage | 2.8V |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 740mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 190mR |
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